| PART |
Description |
Maker |
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB85343C-70 |
CMOS 1M×32 BIT
Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块)
CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) 的CMOS 100万32位的超页模式内存的CMOS00万32位超级页面存取模式动态内存模块）
|
Fujitsu Limited
Fujitsu, Ltd.
|
| MB81V16160A-60 MB81V16160A-60L |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB814100A-80 MB814100A-60 MB814100A-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HY514400A HY514400AJ HY514400ALJ HY514400ALR HY514 |
1M x 4-bit CMOS DRAM
|
ETC
|
| HY514400A HY514400AJ HY514400ALJ HY514400ALR HY514 |
1M x 4-bit CMOS DRAM
|
List of Unclassifed Manufacturers
|
| UPD424260LE-70 |
CMOS 4M Bit DRAM
|
NEC
|
| HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM
1M x 16 Bit 1k 5 V 50 ns EDO DRAM
-1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM
1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYM536400A |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM536400B |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
